Etching of platinum thin films in an inductively coupled plasma

Dong Sing Wuu, Nai Hao Kuo, Fang Ching Liao, Ray-Hua Horng, Ming Kwei Lee

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Experimental studies of the etching of platinum thin films have been performed with a photoresist mask in an inductively coupled plasma. The physical bombardment by incident Ar ions dominates the platinum etch rate. In order to minimize the formation of sidewall deposition, the effects of the addition of various halogen gases to Ar plasma were evaluated. For the blanket platinum samples etched in Ar/CF4 plasmas, the existence of Pt-F compounds was found by using secondary ion mass spectrometry. By adding CF4 in Ar/Cl2 gas plasmas, an increase of etch rate for platinum films was observed. This suggests that the addition of CF4 to the Ar/Cl2 gas mixture could enhance the reaction between platinum and fluorine on the platinum surface by providing more fluorine radicals and ions. The respective etch contribution provided by the three components (Ar, CF4 and Cl2) has been investigated. A fence-free platinum electrode can be obtained under an optimum Ar/CF4/Cl2 gas mixture ratio, resulting in an etch rate of 48 nm/min.

Original languageEnglish
Pages (from-to)638-643
Number of pages6
JournalApplied Surface Science
Volume169-170
DOIs
StatePublished - 15 Jan 2001

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