Etching of GaN by microwave plasma of hydrogen

Rajanish N. Tiwari, Li Chang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H2 plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.

Original languageEnglish
Article number035010
Pages (from-to)1-6
Number of pages6
JournalSemiconductor Science and Technology
Issue number3
StatePublished - Mar 2010

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