Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

D. S. Wuu*, C. C. Lin, Ray-Hua Horng, F. C. Liao, Y. H. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.

Original languageEnglish
Pages (from-to)2231-2236
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
StatePublished - 1 Nov 2001

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