The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Nov 2001|