Estimation of ultra-shallow plasma doping (PD) layer's optical absorption properties by spectroscopic ellipsometry (SE)

G. G. Jin*, Y. Sasaki, K. Tsutsui, H. Tamura, B. Mizuno, R. Higaki, T. Satoh, K. Majima, H. Sauddin, K. Takagi, S. Ohmi, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

We evaluated the optical absorption properties of ultra-shallow (<10 nm) plasma doping (PD) layers by spectroscopic ellipsometry (SE). The optical absorption coefficients of PD layers are much larger than that of crystalline Si (c-Si) substrate by one figure at maximum in the wavelength range from 400 nm to 800 nm. We also found that higher DC bias during PD resulted in higher optical absorption coefficient for the same PD time of 60 seconds.

Original languageEnglish
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages102-103
Number of pages2
Volume4
ISBN (Print)7309039157
StatePublished - 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: 15 Mar 200416 Mar 2004

Conference

ConferenceExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period15/03/0416/03/04

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