Estimation of the effect of channel shortening for P-type poly-Si TFTs under AC stress

Shih Che Huang*, Hung Chuan Tsao, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The behavior of the channel shortening effect of the P-type poly-Si TFTs under gate dynamic stress is examined with the I-V and C-V curves. It is discovered the effect is similar to the HEIP effect in P-MOSFETs. The affected channel length estimated from C-V curves is also in accordance with the increased mobility extracted from the I-V curves.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages134-137
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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