ESD robustness of thin-film devices with different layout structures in LTPS technology

Chih Kang Deng, Ming-Dou Ker*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.

Original languageEnglish
Pages (from-to)2067-2073
Number of pages7
JournalMicroelectronics Reliability
Volume46
Issue number12
DOIs
StatePublished - 1 Dec 2006

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