ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's

Ming-Dou Ker*, Ta Lee Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

This paper reports an ESD internal gate-oxide damage occurred on the digital-analog interface of a mixed-mode CMOS IC. A new ESD protection method is proposed to rescue this internal gate-oxide damage by adding ESD-protection devices on the long metal line between digital-analog interfaces. Experimental verification has confirmed that the IC product can be rescued to pass 2-KV ESD stress from the digital/analog VDD to digital/analog VSS pads without causing any internal damage again.

Original languageEnglish
Pages (from-to)1727-1730
Number of pages4
JournalMicroelectronics Reliability
Volume36
Issue number11-12 SPEC. ISS.
DOIs
StatePublished - 1 Jan 1996

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