ESD protection design with The Low-Leakage-Current Diode String for RF circuits in BiCMOS SiGe process

Ming-Dou Ker*, Woei Lin Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Low-Leakage-Current Diode String (LLCDS) in a BiCMOS SiGe process is proposed for on-chip ESD protection design in RF circuits. With an additional bias resistance, a voltage is applied to the n-well of diode string resulting in a significant reduction in the leakage current of the diode string under normal circuit operating conditions. The leakage current of LLCDS can be minimized under some selected bias resistance, which can be calculated from the derived equations. Such LLCDS can be used in the power-rail ESD clamp circuit, in cooperation with the small double diodes in the I/O pads, to achieve whole-chip ESD protection for RF ICs in SiGe process. Copyright 2005

Original languageEnglish
Title of host publication2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
StatePublished - 1 Dec 2005
Event2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005 - Anaheim, CA, United States
Duration: 8 Sep 200516 Sep 2005

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
CountryUnited States
CityAnaheim, CA
Period8/09/0516/09/05

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    Ker, M-D., & Wu, W. L. (2005). ESD protection design with The Low-Leakage-Current Diode String for RF circuits in BiCMOS SiGe process. In 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005 [5271826] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).