For high-voltage (HV) applications, the electrostatic discharge (ESD) protection design using a traditional HV device, such as laterally diffused MOSFETs, usually consumes large silicon area to meet sufficient ESD specification. In this paper, an area-efficient ESD protection design with stacked high-holding-voltage silicon-controlled rectifier (HHVSCR) is proposed and verified in a 0.25- μ 5/60 V Bipolar-CMOS-DMOS process. The proposed HHVSCR is fabricated in low-voltage wells and has the characteristics of HHV and high failure current with the same silicon area as the traditional SCR. From the experimental results, the proposed HHVSCR stacking structure can fit the desired ESD protection design window for the 60 V pins of a battery-monitoring IC and successfully protect these 60 V pins against 7-kV human-body-mode ESD stress.
- Electrostatic discharge (ESD)
- holding voltage
- latchup-free immunity
- silicon-controlled rectifier (SCR).