ESD protection design on T/R switch with embedded SCR in CMOS process

Tao Yi Hung, Ming-Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

ESD protection design for the RF transmit/receive switch (T/R switch) with embedded silicon-controlled rectifier (SCR) is proposed, where the SCR device is embedded in the ESD diode and the transistors of T/R switch by layout skill. Silicon chip verified in a 90-nm CMOS process has been measured by TLP and HBM ESD test to confirm its efficiency for ESD protection. The parasitic capacitance from the ESD devices was also measured. Failure analysis by SEM was performed to find the burned-out site on the T/R switch with the proposed design. From the failure analysis SEM pictures, the embedded SCR in the proposed design is actually triggered on to discharge ESD current.

Original languageEnglish
Title of host publication24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-6
Number of pages6
ISBN (Electronic)9781538617793
DOIs
StatePublished - 5 Oct 2017
Event24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
Duration: 4 Jul 20177 Jul 2017

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
CountryChina
CityChengdu
Period4/07/177/07/17

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  • Cite this

    Hung, T. Y., & Ker, M-D. (2017). ESD protection design on T/R switch with embedded SCR in CMOS process. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-6). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060079