ESD protection design for mixed-voltage I/O buffer by using stacked-NMOS triggered SCR device

Ming-Dou Ker, Chien Hui Chuang, Hsin Chin Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

A new ESD protection circuit, by using the stacked-NMOS triggered silicon controlled rectifier (SNTSCR) as the ESD clamp device, is designed to protect the mixed-voltage I/O buffers of CMOS IC's. Without using the thick gate oxide, the experimental results in a 0.35 -μm CMOS process have proven that the human-body-model ESD level of the mixed-voltage I/O buffer can be successfully increased from the original ∼2kV to become 蠑8kV by using this new proposed ESD protection circuit.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001
PublisherESD Association
Pages32-43
Number of pages12
ISBN (Electronic)1585370398
StatePublished - 1 Jan 2001
EventElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001 - Portland, United States
Duration: 11 Sep 200113 Sep 2001

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2001-January
ISSN (Print)0739-5159

Conference

ConferenceElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001
CountryUnited States
CityPortland
Period11/09/0113/09/01

Keywords

  • Clamps
  • CMOS process
  • CMOS technology
  • Electrostatic discharge
  • Integrated circuit technology
  • MOS devices
  • Power supplies
  • Protection
  • Thyristors
  • Voltage

Fingerprint Dive into the research topics of 'ESD protection design for mixed-voltage I/O buffer by using stacked-NMOS triggered SCR device'. Together they form a unique fingerprint.

Cite this