ESD protection design for I/O cells with embedded SCR structure as power-rail ESD clamp device in nanoscale CMOS technology

Ming-Dou Ker*, Kun Hsien Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This paper presents a new electrostatic discharge (ESD) protection design for input/output (I/O) cells with embedded silicon-controlled rectifier (SCR) structure as power-rail ESD clamp device in a 130-nm CMOS process. Two new embedded SCR structures without latchup danger are proposed to be placed between the input (or output) pMOS and nMOS devices of the I/O cells. Furthermore, the turn-on efficiency of embedded SCR can be significantly increased by substrate-triggered technique. Experimental results have verified that the human-body-model (HBM) ESD level of this new proposed I/O cells can be greater than 5 kV in a 130-nm fully salicided CMOS process. By including the efficient power-rail ESD clamp device into each I/O cell, whole-chip ESD protection scheme can be successfully achieved within a small silicon area of the I/O cell.

Original languageEnglish
Pages (from-to)2329-2338
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume40
Issue number11
DOIs
StatePublished - 1 Nov 2005

Keywords

  • Electrostatic discharge (ESD)
  • Input/output (I/O) cell
  • Power-rail ESD clamp device
  • Silicon controlled rectifier (SCR)

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