ESD protection design for I/O cells in sub-130-nm CMOS technology with embedded SCR structure

Kun Hsien Lin, Ming-Dou Ker

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper presents a new electrostatic discharge (ESD) protection design for input/output (I/O) cells with embedded silicon-controlled rectifier (SCR) structure as power-rail ESD clamp device in a 130-nm CMOS process. Two new embedded SCR structures without latchup danger are proposed to be placed between the input (or output) pMOS and nMOS devices of the I/O cells. Furthermore, the turn-on efficiency of embedded SCR can be significantly increased by substrate-triggered technique. By including the efficient power-rail ESD clamp device into each I/O cell, whole-chip ESD protection scheme can be successfully achieved within a small silicon area of I/O cell.

Original languageEnglish
Article number1464805
Pages (from-to)1182-1185
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: 23 May 200526 May 2005

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