ESD protection circuits with novel MOS-bounded diode structures

Ming-Dou Ker, Che Hao Chuang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


On-chip ESD protection circuits realized with novel diode structures without the field-oxide boundary across the p/n junction are proposed. A PMOS (NMOS) is especially inserted into the diode structure to form the PMOS-bounded (NMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. Without the field oxide boundary across the p/n junction of diode structure, the proposed PMOS-bounded and NMOS-bounded diodes can sustain much higher ESD stress, especially under the reverse-biased condition. Such PMOS-bounded and NMOS-bounded diodes are fully process-compatible to general CMOS processes without additional process modification or mask layers. The ESD protection circuits designed by such new diodes with different junction perimeters have been successfully verified in a 0.35-μm CMOS process.

Original languageEnglish
Pages (from-to)V/533-V/536
JournalProceedings - IEEE International Symposium on Circuits and Systems
StatePublished - 1 Jan 2002

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