Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and the relative strength of individual mobility components. The model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (10(14) to 10(18) cm(-3)). To make the error-free proposal more general, we elaborate on several issues, including strain, impurity Coulomb scattering, and remote scattering. The thin-film case can be treated accordingly.
- Matthiessen's rule; metal-oxide-semiconductor field-effect transistors (MOSFETs); mobility; model; scattering; simulation; strain; universal mobility
- SILICON INVERSION-LAYERS; SURFACE-ROUGHNESS; ELECTRON-MOBILITY; LIMITED MOBILITY; SOI MOSFETS; FIELD; GATE; TRANSISTORS; EXTRACTION; SIMULATION
Chen, M-J., Lee, W-H., & Huang, Y-H. (2013). Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region. IEEE Transactions on Electron Devices, 60(2), 753-758. https://doi.org/10.1109/TED.2012.2233202