Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

Flora M. Li, Chien-Wen Hsieh, Sharvai Dalal, Marcus C. Newton, James E. Stott, Pritesh Hiralal, Arokia Nathan, Paul A. Warburton, Husnu E. Unalan, Paul Beecher, Andrew J. Flewitt, Ian Robinson, Gehan Amaratunga, William I. Milne

Research output: Contribution to journalComment/debate

1 Scopus citations

Abstract

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

Original languageEnglish
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume56
Issue number1
DOIs
StatePublished - 21 Sep 2009

Keywords

  • Electron mobility
  • HEMTs
  • Nanostructures
  • Thin film transistors
  • Zinc compounds
  • Zinc oxide

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    Li, F. M., Hsieh, C-W., Dalal, S., Newton, M. C., Stott, J. E., Hiralal, P., Nathan, A., Warburton, P. A., Unalan, H. E., Beecher, P., Flewitt, A. J., Robinson, I., Amaratunga, G., & Milne, W. I. (2009). Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009)). IEEE Transactions on Electron Devices, 56(1). https://doi.org/10.1109/TED.2008.2010442