Erratum: Publisher's note: "Memory effect of oxide/SiC:O/oxide sandwiched structures (Applied Physics Letters (2004) 84 (2094))

T. C. Chang^*, S. T. Yan, F. M. Yang, Po-Tsun Liu, S. M. Sze

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

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@article{43417e09816c4fef83a005954d0de1d8,

title = "Erratum: Publisher's note: {"}Memory effect of oxide/SiC:O/oxide sandwiched structures (Applied Physics Letters (2004) 84 (2094))",

author = "Chang, {T. C.} and Yan, {S. T.} and Yang, {F. M.} and Po-Tsun Liu and Sze, {S. M.}",

year = "2004",

month = jun,

day = "7",

doi = "10.1063/1.1761633",

language = "English",

volume = "84",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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T2 - Publisher's note: "Memory effect of oxide/SiC:O/oxide sandwiched structures (Applied Physics Letters (2004) 84 (2094))

AU - Chang, T. C.

AU - Yan, S. T.

AU - Yang, F. M.

AU - Liu, Po-Tsun

AU - Sze, S. M.

PY - 2004/6/7

Y1 - 2004/6/7

UR - http://www.scopus.com/inward/record.url?scp=3042589653&partnerID=8YFLogxK

U2 - 10.1063/1.1761633

DO - 10.1063/1.1761633

M3 - Comment/debate

AN - SCOPUS:3042589653

VL - 84

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -