Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)

Anne S. Verhulst*, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Abstract

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy description, as in the original manuscript, leads to an incorrect simulation result. Therefore, a fully comprehensive analytical description and a corrected conclusion concerning the particular point of an increase in apparent coercive voltage in the steep-slope ferroelectric tunnel-FET, are presented. (Figure Presented). While all the other major results and discussions in [1] remain fully valid, only [1, Sec. VI-A], discussing a possible explanation for the experimentally observed apparent increase in the coercive voltage value of an FE capacitor in a circuit, is affected.

Original languageEnglish
Article number9121803
Pages (from-to)3017
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume67
Issue number7
DOIs
StatePublished - Jul 2020

Fingerprint Dive into the research topics of 'Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)'. Together they form a unique fingerprint.

Cite this