Erratum: "Device linearity comparison of uniformly doped and α-doped In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)

Y. C. Lin*, Edward Yi Chang, H. Yamaguchi, H. Hirayama, X. Y. Chang, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Original languageEnglish
Number of pages1
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Dec 2006

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