Er Inserted Ni silicide metal source/drain for schottky MOSFETs

Parhat Ahmet*, Wataru Hosoda, Kohei Noguchi, Yoshihisa Ohishi, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.

Original languageEnglish
Title of host publicationIWJT-2010
Subtitle of host publicationExtended Abstracts - 2010 International Workshop on Junction Technology
Pages62-64
Number of pages3
DOIs
StatePublished - 2010
Event10th International Workshop on Junction Technology, IWJT-2010 - Shanghai, China
Duration: 10 May 201011 May 2010

Publication series

NameIWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Conference

Conference10th International Workshop on Junction Technology, IWJT-2010
CountryChina
CityShanghai
Period10/05/1011/05/10

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    Ahmet, P., Hosoda, W., Noguchi, K., Ohishi, Y., Kakushima, K., Tsutsui, K., & Iwai, H. (2010). Er Inserted Ni silicide metal source/drain for schottky MOSFETs. In IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology (pp. 62-64). [5474989] (IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2010.5474989