Equivalent noise temperature representation for scaled MOSFETs

Hiroshi Shimomura*, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.

Original languageEnglish
Pages (from-to)1550-1552
Number of pages3
JournalIEICE Transactions on Electronics
VolumeE93-C
Issue number10
DOIs
StatePublished - Oct 2010

Keywords

  • Equivalent noise temperature
  • MOSFETs
  • Thermal noise

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