Epitaxy of Si1-xgex by ultrahigh-vacuum chemical vapor deposition using Si2H6 and GeH4

Liang Po Chen, Tsung Chih Chou, Wen Chung Tsai, Guo Wei Huang, Hua Chou Tseng, Horng-Chih Lin, Chun Yen Chang

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Disilane and germane were used to grow Si1-xGex epilayers at 550°C by ultrahigh-vacuum chemical vapor depo-sition (UHVCVD). The solid composition x and growth rate of Si1-xGex were evaluated from double-crystal X-ray rocking curves and show very strong dependence on the total source gas flow rate ([GeH4] +[Si2H6]) and the gas ratio ([GeH4]/[GeH4]+[Si2H6]). The solid composition increases with increase of the gas ratio and also with in-creasing the total source flux by keeping gas ratio constant. The growth rate increases with the solid composition at lower values and then becomes saturated in the higher composition range (x>0.22). The results can be ex-plained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites and hydrogen desorption under different growth conditions.

Original languageEnglish
Pages (from-to)L869-L871
JournalJapanese Journal of Applied Physics
Issue number7
StatePublished - 1 Jan 1995


  • Disilane
  • Germane
  • Hydrogen desorption
  • Low-temperature epitaxy
  • SiGe

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