Epitaxy of m-plane ZnO on (112) LaAlO3 substrate

Yen Teng Ho, Wei Lin Wang, Chun Yen Peng, Wei Chun Chen, Mei Hui Liang, Sheng Tian, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Heteroepitaxial growth of non-polar m-plane (10 1̄0) ZnO has been demonstrated on (112) LaAlO3 single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 1̄0)ZnO ∥ (112) LAO , (11̄20) LAO ∥ ( 1̄ 1̄1) ZnO, and [0001] ZnO ∥ [1̄10] LAO

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume3
Issue number4
DOIs
StatePublished - 9 Dec 2009

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    Ho, Y. T., Wang, W. L., Peng, C. Y., Chen, W. C., Liang, M. H., Tian, S., & Chang, L. (2009). Epitaxy of m-plane ZnO on (112) LaAlO3 substrate. Physica Status Solidi - Rapid Research Letters, 3(4), 109-111. https://doi.org/10.1002/pssr.200903009