Epitaxial TiN formation on rutile titanium dioxide (0 0 1) single crystal by nitridation

Thi Hien Do*, Ching Chang, Lin Lung Wei, Kun An Chiu, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

TiN has been synthesized by plasma nitridation of single crystalline rutile (TiO2). Nitridation of single crystalline rutile (0 0 1) was performed with microwave plasma of N2 gas. The chemical evidence for TiN formation was determined by x-ray photoelectron spectroscopy and x-ray energy-dispersive spectroscopy with scanning transmission electron microscopy (STEM). Structural characterization from x-ray diffraction patterns and STEM high angle annular dark field images in Z-contrast reveals that TiN consisting of orthogonal domain structure epitaxially forms on rutile substrate. From the orientation relationship, it is understood that nitridation of rutile may proceed along [110]TiO2 to form (1 1 0)-oriented TiN.

Original languageEnglish
Article number144614
JournalApplied Surface Science
Volume506
DOIs
StatePublished - 15 Mar 2020

Keywords

  • Nitridation
  • Plasma
  • TiN
  • TiO

Fingerprint Dive into the research topics of 'Epitaxial TiN formation on rutile titanium dioxide (0 0 1) single crystal by nitridation'. Together they form a unique fingerprint.

Cite this