Epitaxial overgrowth of gallium nitride nano-rods on silicon (111) substrates by RF-plasma-assisted molecular beam epitaxy

Jui Tai Ku*, Tsung Hsi Yang, Jet Rung Chang, Yuen Yee Wong, Wu-Ching Chou, Chun Yen Chang, Chiang Yao Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FX A) photoluminescence (PL) peak at 3.478 eV and the E2 high phonon Raman shift of 567 cm-1. It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN.

Original languageEnglish
Article number04DH06
JournalJapanese Journal of Applied Physics
Volume49
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2010

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