EPITAXIAL GROWTH OF NICKEL SILICIDE NiSi2 ON SILICON.

King-Ning Tu*, Eileen I. Alessandrini, Wei Ken Chu, Hubert Krautle, James W. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

107 Scopus citations

Abstract

The formation of structures of nickel silicides on Si have been studied by the use of glancing-angle X-ray diffraction, MeV**4He** plus backscattering, reflection electron diffraction, and replica electron microscopy. By reacting evaporated Ni films with Si wafers in the temperature range from 200 to 800 degree C, three Ni silicides have been found. The Ni//2Si phase starts to form at 200 degree C at the Si-Ni interface. Around 350 degree C, the NiSi phase grows from the Si-Ni//2Si interface. The NiSi phase is stable in the temperature range of 350 to 750 degree C and above that it transforms abruptly to NiSi//2. The disilicide grows epitaxially on (111), (110) and (100) surfaces of Si.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalJapanese Journal of Applied Physics
Volume13
DOIs
StatePublished - 1 Jan 1974
EventInt Vac Congr, 6th, Proc - Kyoto, Jpn
Duration: 25 Mar 197429 Mar 1974

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