Epitaxial growth of AlAsXSb1-X by MOCVD

Wei-Kuo Chen, Jehn Ou

Research output: Contribution to conferencePaper

Abstract

The deposition of AlAsXSb1-X films is studied systematically using an metalorganic chemical vapor deposition growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSbi-x epitaxial films throughout the entire range of the solid composition for temperatures above 550 °C.

Original languageEnglish
DOIs
StatePublished - 1 Jan 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 Jul 199415 Jul 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period12/07/9415/07/94

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    Chen, W-K., & Ou, J. (1994). Epitaxial growth of AlAsXSb1-X by MOCVD. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771313