Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Ming Yang Li*, Yumeng Shi, Chia Chin Cheng, Li Syuan Lu, Yung Chang Lin, Hao Lin Tang, Meng Lin Tsai, Chih Wei Chu, Kung Hwa Wei, Jr Hau He, Wen Hao Chang, Kazu Suenaga, Lain Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

668 Scopus citations

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

Original languageEnglish
Pages (from-to)524-528
Number of pages5
JournalScience
Volume349
Issue number6247
DOIs
StatePublished - 31 Jul 2015

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