Epitaxial aln on c-plane sapphire by plasma nitriding

Yi Chun Chen*, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Nitridation of sapphire to form epitaxial AlN by microwave plasma containing nitrogen gas has been investigated to be an efficient process. Structural characterization with chemical analysis by X-ray diffraction and X-ray photoelectron spectroscopy shows that an epitaxial AlN film containing oxygen can form on sapphire by using pure nitrogen plasma. Furthermore, nitridation with N2/H2 plasma not only improves the crystallinity of the epitaxial AlN film without oxygen, but also significantly increases the nitridation rate to 9 nm min-1, resulting in 270 nm thick AlN for 30 min plasma nitriding.

Original languageEnglish
Article numberSC1012
JournalJapanese Journal of Applied Physics
Issue numberSC
StatePublished - 1 Jun 2019

Fingerprint Dive into the research topics of 'Epitaxial aln on c-plane sapphire by plasma nitriding'. Together they form a unique fingerprint.

Cite this