Epitaxial aln on c-plane sapphire by plasma nitriding

Yi Chun Chen*, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nitridation of sapphire to form epitaxial AlN by microwave plasma containing nitrogen gas has been investigated to be an efficient process. Structural characterization with chemical analysis by X-ray diffraction and X-ray photoelectron spectroscopy shows that an epitaxial AlN film containing oxygen can form on sapphire by using pure nitrogen plasma. Furthermore, nitridation with N2/H2 plasma not only improves the crystallinity of the epitaxial AlN film without oxygen, but also significantly increases the nitridation rate to 9 nm min-1, resulting in 270 nm thick AlN for 30 min plasma nitriding.

Original languageEnglish
Article numberSC1012
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSC
DOIs
StatePublished - 1 Jun 2019

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