Epitaxial (001) BiFe O3 membranes with substantially reduced fatigue and leakage

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, C. B. Eom*, Ying-hao Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, D. G. Schlom

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

We report substantially reduced fatigue and electrical leakage in BiFe O3 membranes fabricated by releasing epitaxial (001) BiFe O3 films from the Si substrates on which they were grown. Fatigue-free switching behavior of up to 1010 cycles was observed for BiFe O3 membranes with Pt top electrodes, while as-grown films break down at ∼ 109 cycles. This is attributed to the low coercive field of BiFe O3 membranes and their being free from substrate clamping. In contrast, (111) BiFe O3 films exhibit significant fatigue at the same electric field. Epitaxial (001) BiFe O3 membranes with low coercive field are very promising for lead-free ferroelectric memory and magnetoelectric devices.

Original languageEnglish
Article number062910
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
StatePublished - 22 Feb 2008

Fingerprint Dive into the research topics of 'Epitaxial (001) BiFe O3 membranes with substantially reduced fatigue and leakage'. Together they form a unique fingerprint.

Cite this