Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

Wan Fang Chung; Ting Chang Chang; Hung Wei Li; Shih Ching Chen; Yu Chun Chen; Tseung-Yuen Tseng; Ya-Hsiang Tai

doi:10.1063/1.3580614

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

Wan Fang Chung, Ting Chang Chang^*, Hung Wei Li, Shih Ching Chen, Yu Chun Chen, Tseung-Yuen Tseng, Ya-Hsiang Tai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies.

Original language	English
Article number	152109
Journal	Applied Physics Letters
Volume	98
Issue number	15
DOIs	https://doi.org/10.1063/1.3580614
State	Published - 11 Apr 2011

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title = "Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors",

abstract = "The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies.",

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language = "English",

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Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors. / Chung, Wan Fang; Chang, Ting Chang; Li, Hung Wei; Chen, Shih Ching; Chen, Yu Chun; Tseng, Tseung-Yuen ; Tai, Ya-Hsiang.

In: Applied Physics Letters, Vol. 98, No. 15, 152109, 11.04.2011.

Research output: Contribution to journal › Article › peer-review

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AU - Chang, Ting Chang

AU - Li, Hung Wei

AU - Chen, Shih Ching

AU - Chen, Yu Chun

AU - Tseng, Tseung-Yuen

AU - Tai, Ya-Hsiang

PY - 2011/4/11

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AB - The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies.

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Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

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