Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Po-Tsun Liu*, Yi Teh Chou, Li Feng Teng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

185 Scopus citations

Abstract

We investigated the effects of bias stress on a passivation-free InZnO thin-film transistors (a-IZO TFTs) exposed to either the atmosphere or a vacuum. The magnitude of threshold voltage shift increased with the application duration of bias stress, to an extent that was much larger in the atmosphere than in the vacuum. The threshold voltage recovered slowly to its nearly initial value when the gate bias stress was removed. The electrical metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, and a dynamic equilibrium was finally achieved, regardless of the polarity of stress voltage.

Original languageEnglish
Article number233504
JournalApplied Physics Letters
Volume95
Issue number23
DOIs
StatePublished - 18 Dec 2009

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