Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

T. C. Chang, M. F. Chou*, Y. J. Mei, J. S. Tsang, Fu-Ming Pan, W. F. Wu, M. S. Tsai, C. Y. Chang, F. Y. Shih, H. D. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Low density material such as hydrogen silsesquioxane (HSQ) can provide a lower dielectric constant than a conventional silicon dioxide insulator. However, the thermal stability of as-cured HSQ is about 400°C. Both the leakage current and dielectric constant of HSQ rapidly increase with increasing annealing temperature. In this work, we study the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment. The fluorine implantation step can enhance the thermal stability of the HSQ film as high as 500°C. In addition, the implantation treatment after the curing step is more efficient in enhancing the thermal stability of the HSQ film than before the curing step.

Original languageEnglish
Pages (from-to)351-355
Number of pages5
JournalThin Solid Films
Volume332
Issue number1-2
DOIs
StatePublished - 2 Nov 1998

Keywords

  • Hydrogen silsesquioxane
  • Ion implantation
  • Low dielectric constant

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