Enhancing the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the diameter and tilt of the aluminum sidewall

Yung Min Pai, Chih Hao Lin, Chun Fu Lee, Chun Peng Lin, Cheng-Huan Chen, Hao-Chung Kuo*, Zhi Ting Ye

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

Original languageEnglish
Article number420
JournalCrystals
Volume8
Issue number11
DOIs
StatePublished - 5 Nov 2018

Keywords

  • Deep-ultraviolet light-emitting diode
  • Light emitting diode
  • Metal diameter of cavity bottom
  • Reflector inclined plane

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