To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum-or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.
|Title of host publication||IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)|
|Number of pages||4|
|State||Published - 2018|
- Amorphous oxide semiconductor; bias stability; hybrid inverter; additive patterning; solution based
- FILM TRANSISTORS
Chen, C., Li, G., Li, M., Yang, B-R., Liu, C., Lee, C. Y., Wu, Y. C., Lu, P-Y., & Shieh, H-P. (2018). Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications. In IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) (pp. 237-240) https://doi.org/10.1109/3M-NANO.2018.8552192