To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum-or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.
|Title of host publication||IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)|
|Number of pages||4|
|State||Published - 2018|
- Amorphous oxide semiconductor; bias stability; hybrid inverter; additive patterning; solution based
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