Enhancing luminescence efficiency of InAs quantum dots at 1.5 μm using a carrier blocking layer

Tung Po Hsieh*, Pei Chin Chiu, Jen Inn Chyi, Hsiang Szu Chang, Wen Yen Chen, Tzu Min Hsu, Wen-Hao Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The authors report an effective way to enhance the optical efficiency of InAs quantum dots (QDs) on GaAs emitting at the wavelength of 1.5 μm. It is found that the loss of holes from QDs to their proximity via the high indium composition InGaAs overgrown layer, which is necessary for achieving long wavelength emission, is the origin of photoluminescence intensity degradation at high temperature. Inserting a 4 nm thick Al0.45Ga0.55As layer, acting as a carrier blocking layer, into the GaAs capping matrix can improve the room temperature photoluminescence peak intensity by five and two times for the ground and first excited states, respectively.

Original languageEnglish
Article number053110
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
StatePublished - 14 Sep 2006

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