Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface

B. W. Lin*, W. C. Hsu, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages67-69
Number of pages3
Edition13
DOIs
StatePublished - 1 Dec 2010
EventState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number13
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

Fingerprint Dive into the research topics of 'Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface'. Together they form a unique fingerprint.

  • Cite this

    Lin, B. W., Hsu, W. C., & Wu, Y-C. (2010). Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface. In State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 (13 ed., pp. 67-69). (ECS Transactions; Vol. 33, No. 13). https://doi.org/10.1149/1.3485608