Abstract
Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.
Original language | English |
---|---|
Pages (from-to) | 624-627 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 37 |
Issue number | 5 |
DOIs | |
State | Published - 1 May 2008 |
Keywords
- AlGaN/GaN heterostructures
- Schottky contacts
- Tungsten nitride