Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu; Edward Yi Chang; Jui Chien Huang; Chia Ta Chang; Mei Hsuan Lin; Ching Tung Lee

doi:10.1007/s11664-008-0384-9

Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu^*, Edward Yi Chang, Jui Chien Huang, Chia Ta Chang, Mei Hsuan Lin, Ching Tung Lee

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Tungsten, stoichiometric W ₂N, and nitrogen-rich W ₂N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

Original language	English
Pages (from-to)	624-627
Number of pages	4
Journal	Journal of Electronic Materials
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s11664-008-0384-9
State	Published - 1 May 2008

Keywords

AlGaN/GaN heterostructures
Schottky contacts
Tungsten nitride

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title = "Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures",

abstract = "Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.",

keywords = "AlGaN/GaN heterostructures, Schottky contacts, Tungsten nitride",

author = "Lu, {Chung Yu} and Chang, {Edward Yi} and Huang, {Jui Chien} and Chang, {Chia Ta} and Lin, {Mei Hsuan} and Lee, {Ching Tung}",

year = "2008",

month = may,

day = "1",

doi = "10.1007/s11664-008-0384-9",

language = "English",

volume = "37",

pages = "624--627",

journal = "Journal of Electronic Materials",

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Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures. / Lu, Chung Yu; Chang, Edward Yi; Huang, Jui Chien; Chang, Chia Ta; Lin, Mei Hsuan; Lee, Ching Tung.

In: Journal of Electronic Materials, Vol. 37, No. 5, 01.05.2008, p. 624-627.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

AU - Lu, Chung Yu

AU - Chang, Edward Yi

AU - Huang, Jui Chien

AU - Chang, Chia Ta

AU - Lin, Mei Hsuan

AU - Lee, Ching Tung

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

AB - Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

KW - AlGaN/GaN heterostructures

KW - Schottky contacts

KW - Tungsten nitride

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U2 - 10.1007/s11664-008-0384-9

DO - 10.1007/s11664-008-0384-9

M3 - Article

AN - SCOPUS:42249102080

VL - 37

SP - 624

EP - 627

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -

Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Abstract

Keywords

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