Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu*, Edward Yi Chang, Jui Chien Huang, Chia Ta Chang, Mei Hsuan Lin, Ching Tung Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

Original languageEnglish
Pages (from-to)624-627
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - 1 May 2008

Keywords

  • AlGaN/GaN heterostructures
  • Schottky contacts
  • Tungsten nitride

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