Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system

Kow-Ming Chang, Po Ching Ho*, Atthaporn Ariyarit, Kuo Hui Yang, Jui Mei Hsu, Chin Jyi Wu, Chia Chiang Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bilayer Ga-doped zinc oxide/SiOx films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 × 10- 4 Ω·cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide.

Original languageEnglish
Pages (from-to)460-464
Number of pages5
JournalThin Solid Films
Volume548
DOIs
StatePublished - 2 Dec 2013

Keywords

  • Atmospheric pressure plasma
  • Light-trapping effect
  • Transparent conductive oxide

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