Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer

J. Y. Chen, Kien-Wen Sun*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

113 Scopus citations

Abstract

In this report, the results of the fabrication of nanostructured Si molds by e-beam lithography and chemical wet etching are presented. A home-made pneumatic nanoimprint system was used to transfer the mold patterns to a PMMA layer on a Si template using the spin-coating replication/hot-embossing techniques. The patterned PMMA layer was peeled off from the Si template and directly transferred onto the surface of a poly-Si P-N junction solar cell device to serve as the anti-reflection (AR) layer. It provides a simple and low-cost means for large-scale use in the production of AR layers for improving solar cell performance. A drastic reduction in reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells from 10.4% to 13.5% using the nanostructured PMMA layer as the AR layer was validated.

Original languageEnglish
Pages (from-to)629-633
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume94
Issue number3
DOIs
StatePublished - 1 Mar 2010

Keywords

  • Anti-reflection
  • Nanoimprint
  • Sub-wavelength structure

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