Enhancement of Quantum Efficiency in Thin Photodiodes through Absorptive Resonance

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Abstract

The spectral response of resonantly enhanced photodiodes is analyzed theoretically and verified experimentally. Comprehensive design guidelines and formulas are given for device structures contain- ing a metal reflector, a contact layer, an optional grading layer, an absorbing layer, and a quarter-wave stack (QWS). The analysis shows, for instance, that the quantum efficiency of a Schottky photodiode with a 162-nm GaInAs absorbing layer can be enhanced 3.7 fold by using a 41-layer AlInAs/AlGaInAs QWS. The number of layers required could be much lower for other material systems and/or if the substrate is removed. Experimentally, 50% enhancement is demonstrated for a 475-nm thick absorbing layer at 1.52 µm by using a 16-layer QWS. The resonance width is ~4.4%. This type of structures should be very valuable for very small size ultrafast photodiodes and for optoelectronic integration.

Original languageEnglish
Pages (from-to)321-328
Number of pages8
JournalJournal of Lightwave Technology
Volume9
Issue number3
DOIs
StatePublished - 1 Jan 1991

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