Enhancement of performance and storage stability of thin-film transistor with InZnSnO/InGaZnO bilayer stack channel layers

Xiu Yun Yeh, Chur Shyang Fuh, Po-Tsun Liu*, Chih Hsiang Chang, Che Chia Chang, Yun Chu Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated on electrical performance and storage issues of high efficiency amorphous In-Sn-Zn-O (IZTO) thin film transistor. By capping additional In-Ga-Zn-O (IGZO) layer on IZTO to form the bilayer channel, the device's performance could obviously enhance. The mobility of devices without and with 20 nm, 40 nm IGZO capping layer was 24.2 cm 2 /Vs, 29.1 cm 2 /Vs and 33.1 cmVVs, respectively. The threshold voltage and substrate swing were improved proportionally with the thickness of IGZO capping layer. In addition, the storage issues of devices could also be eliminated by using the bilayer channel structure without any threshold voltage shift after placing in ambient environment for half month. Owning to the high performance and better storage stability, the TFTs with IZTO/IGZO bilayer channel is promising for next-generation AMOLEDs displays application.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages292-294
Number of pages3
ISBN (Electronic)9781510827790
StatePublished - 1 Jan 2014
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 3 Dec 20145 Dec 2014

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Conference

Conference21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period3/12/145/12/14

Keywords

  • Bilayer Channel
  • High mobility
  • Threshold voltage (Vm)
  • Transparent amorphous oxide semiconductor (TAOS)

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