Enhancement of nonvolatile floating gate memory devices containing AgInSbTe-SiO 2 nanocomposite by inserting HfO 2/SiO 2 blocking oxide layer

Kuo Chang Chiang*, Tsung-Eong Hsien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents an enhancement of nonvolatile floating gate memory (NFGM) devices comprised of AglnSbTe (AlST) nanocomposite as the charge-storage trap layer and HfO 2 or HfO 2/SiO 2 as the blocking oxide layer. A significantly large memory window (ΔV FB) shift = 30.7 V and storage charge density = 2.3×10 13 cm -2 at ±23V gate voltage sweep were achieved in HfO 2/SiO 2/AlST sample. Retention time analysis observed a ΔV FB shift about 19.3 V and the charge loss about 13.4% in such a sample under the ±15V gate voltage stress after 10 4 sec retention time test. Regardless of applied bias direction, the sample containing HfO 2/SiO 2 layer exhibited the leakage current density as low as 150 nA/cm 2 as revealed by the current-voltage (I-V) measurement. This effectively suppresses the electron injection between gate electrode and charge trapping layer and leads to a substantial enhancement of NFGM characteristics.

Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Pages35-40
Number of pages6
DOIs
StatePublished - 29 Dec 2011
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 25 Apr 201129 Apr 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1337
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period25/04/1129/04/11

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