Enhancement of NiSi-based nanocrystal formation by incorporating Ge elements for nonvolatile memory devices

Chih Wei Hu*, Ting Chang Chang, Chun Hao Tu, Cheng Neng Chiang, Chao Cheng Lin, Sheng Wei Lee, Chun Yen Chang, Simon M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600°C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number9
DOIs
StatePublished - 7 Aug 2009

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