Abstract
The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.
Original language | English |
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Pages (from-to) | 5438-5440 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 47 |
Issue number | 7 PART 1 |
DOIs | |
State | Published - 11 Jul 2008 |
Keywords
- External quantum efficiency
- Output power
- Textured
- Titanium dioxide (TiO)