Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

Kuo Chin Huang; Wen How Lan; Kai-Feng Huang

doi:10.1143/JJAP.47.5438

Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

Kuo Chin Huang^*, Wen How Lan, Kai-Feng Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO₂) textured film has been observed. The output power values of conventional and TiO₂ textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO₂ textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO₂ textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO₂ textured film.

Original language	English
Pages (from-to)	5438-5440
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.5438
State	Published - 11 Jul 2008

Keywords

External quantum efficiency
Output power
Textured
Titanium dioxide (TiO)

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title = "Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing",

abstract = "The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.",

keywords = "External quantum efficiency, Output power, Textured, Titanium dioxide (TiO)",

author = "Huang, {Kuo Chin} and Lan, {Wen How} and Kai-Feng Huang",

year = "2008",

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doi = "10.1143/JJAP.47.5438",

language = "English",

volume = "47",

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journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

AU - Huang, Kuo Chin

AU - Lan, Wen How

AU - Huang, Kai-Feng

PY - 2008/7/11

Y1 - 2008/7/11

N2 - The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.

AB - The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.

KW - External quantum efficiency

KW - Output power

KW - Textured

KW - Titanium dioxide (TiO)

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DO - 10.1143/JJAP.47.5438

M3 - Article

AN - SCOPUS:55149113970

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 7 PART 1

ER -

Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

Abstract

Keywords

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