Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

Kuo Chin Huang*, Wen How Lan, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-outputpower InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.

Original languageEnglish
Pages (from-to)5438-5440
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number7 PART 1
DOIs
StatePublished - 11 Jul 2008

Keywords

  • External quantum efficiency
  • Output power
  • Textured
  • Titanium dioxide (TiO)

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