Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

C. H. Chiu; C. E. Lee; C. L. Chao; B. S. Cheng; H. W. Huang; Hao-Chung Kuo; Tien-chang Lu; S. C. Wang; W. L. Kuo; C. S. Hsiao; San-Yuan Chen

doi:10.1149/1.2837644

Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

C. H. Chiu^*, C. E. Lee, C. L. Chao, B. S. Cheng, H. W. Huang, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, W. L. Kuo, C. S. Hsiao, San-Yuan Chen

^*Corresponding author for this work

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34 Scopus citations

Abstract

Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.

Original language	English
Pages (from-to)	H84-H87
Number of pages	4
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2837644
State	Published - 30 Jan 2008

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title = "Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs",

abstract = "Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.",

author = "Chiu, {C. H.} and Lee, {C. E.} and Chao, {C. L.} and Cheng, {B. S.} and Huang, {H. W.} and Hao-Chung Kuo and Tien-chang Lu and Wang, {S. C.} and Kuo, {W. L.} and Hsiao, {C. S.} and San-Yuan Chen",

year = "2008",

month = jan,

day = "30",

doi = "10.1149/1.2837644",

language = "English",

volume = "11",

pages = "H84--H87",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "4",

}

Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs. / Chiu, C. H.; Lee, C. E.; Chao, C. L.; Cheng, B. S.; Huang, H. W.; Kuo, Hao-Chung ; Lu, Tien-chang; Wang, S. C.; Kuo, W. L.; Hsiao, C. S.; Chen, San-Yuan.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 4, 30.01.2008, p. H84-H87.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

AU - Chiu, C. H.

AU - Lee, C. E.

AU - Chao, C. L.

AU - Cheng, B. S.

AU - Huang, H. W.

AU - Kuo, Hao-Chung

AU - Lu, Tien-chang

AU - Wang, S. C.

AU - Kuo, W. L.

AU - Hsiao, C. S.

AU - Chen, San-Yuan

PY - 2008/1/30

Y1 - 2008/1/30

N2 - Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.

AB - Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 4

ER -

Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

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