Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

C. H. Chiu*, C. E. Lee, C. L. Chao, B. S. Cheng, H. W. Huang, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, W. L. Kuo, C. S. Hsiao, San-Yuan Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface.

Original languageEnglish
Pages (from-to)H84-H87
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume11
Issue number4
DOIs
StatePublished - 30 Jan 2008

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