Enhancement of light emission in GaAs epilayers with graphene quantum dots

T. N. Lin, K. H. Chih, M. C. Cheng, C. T. Yuan, C. L. Hsu, J. L. Shen*, J. L. Hou, C. H. Wu, Wu-Ching Chou, T. Y. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml-1. On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.

Original languageEnglish
Pages (from-to)60908-60913
Number of pages6
JournalRSC Advances
Volume5
Issue number75
DOIs
StatePublished - 1 Jan 2015

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