Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

Tan Fu Lei*, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number5
DOIs
StatePublished - 1 Jan 1999

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