ENHANCEMENT OF HOT-ELECTRON CURRENTS IN GRADED-GATE-OXIDE(GGO)-MOSFETS.

P. K. Ko; S. Tam; Chen-Ming Hu; S. S. Wong; C. G. Sodini

doi:10.1109/IEDM.1984.190649

ENHANCEMENT OF HOT-ELECTRON CURRENTS IN GRADED-GATE-OXIDE(GGO)-MOSFETS.

P. K. Ko^*, S. Tam, Chen-Ming Hu, S. S. Wong, C. G. Sodini

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.

Original language	English
Pages (from-to)	88-91
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1984.190649
State	Published - 1 Dec 1984

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title = "ENHANCEMENT OF HOT-ELECTRON CURRENTS IN GRADED-GATE-OXIDE(GGO)-MOSFETS.",

abstract = "Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.",

author = "Ko, {P. K.} and S. Tam and Chen-Ming Hu and Wong, {S. S.} and Sodini, {C. G.}",

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AU - Ko, P. K.

AU - Tam, S.

AU - Hu, Chen-Ming

AU - Wong, S. S.

AU - Sodini, C. G.

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N2 - Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.

AB - Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.

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