Enhancement of data transfer rate of phase change optical disk by doping nitrogen in Ge-In-Sb-Te recording layer

Tung Ti Yeh*, Tsung-Eong Hsien, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

This work investigated the enhancement of the data transfer rate and/or recrystallization speed of Ge-In-Sb-Te recording material by nitrogen doping. The effects of nitrogen content on the dynamic properties of optical disks and the corresponding microstructural changes of the recording layer were studied. The experimental results showed that nitrogen doping at a sputtering gas flow ratio of N2/Ar = 3% might enhance the data transfer rate of an optical disk up to 1.6 times without severely damaging the signal jitter values. However, the disks failed the dynamic tests when too much nitrogen (N 2/Ar ≥ 5%) was introduced. Dynamic testing also revealed that nitrogen doping slightly increased the noise level and jitter of the disks. Transmission electron microscopy (TEM) found that nitrogen doping promoted a phase transformation by generating numerous nucleation sites uniformly distributed in the recording layer and hence increased recrystallization speed.

Original languageEnglish
Pages (from-to)5316-5320
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
StatePublished - 1 Aug 2004

Keywords

  • Data transfer rate
  • Ge-In-Sb-Te recording material
  • Nitrogen doping
  • Recrystallization speed

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